Intel — Copper Electroplating Process Optimization for Semiconductor Manufacturing

This project optimized Intel's copper electroplating process for semiconductor manufacturing, using the Dual Damascene technique. It involved fine-tuning parameters, managing supply chains, and collaborating with stakeholders to improve copper interconnect quality while meeting evolving production demands.

2016-2018

Year

2016-2018

Year

2016-2018

Year

2016-2018

Year

Process Management

Category

Process Management

Category

Process Management

Category

Process Management

Category

Problem

Intel's Manufacturing Challenges (2016-2018):

Between 2016 and 2018, Intel faced significant hurdles in its chip manufacturing process:

  • Struggled to transition from 14nm to 10nm technology node

  • Experienced repeated delays in 10nm production

  • Continued refining 14nm (14nm+, 14nm++) to compensate

  • Risked losing competitive edge to rivals like AMD and TSMC

Electroplating, one of many critical processes in chip fabrication, played a role in these challenges:

  • Used for creating copper interconnects in chip architecture

  • Impacted chip performance, yield, and production costs

  • Required precise control for uniform deposition and void-free filling

  • Needed optimization for smaller feature sizes (50-200nm)

While improving electroplating alone couldn't solve all of Intel's problems, it represented one of many areas where the company needed to innovate to maintain its position in the highly competitive semiconductor industry.

Solution

To address its manufacturing challenges and maintain competitiveness in the semiconductor industry, Intel implemented an advanced copper electroplating process tailored for semiconductor manufacturing. This solution aimed to improve the creation of high-quality copper interconnects, critical for chip performance and yields, especially as feature sizes decreased.

Key components of the solution:

  1. Dual Damascene Technique: Implemented for creating complex interconnect structures, enabling more efficient multi-layer fabrication.

  2. Optimized Seed Layer: Used a copper seed layer to enhance adhesion and improve uniformity of deposition, crucial for smaller feature sizes.

  3. Precision-Controlled Electrolyte Bath: • Copper sulfate as the copper ion source • Sulfuric acid for increased conductivity • Chloride ions to aid copper anode dissolution

  4. Electric Current Control: Applied precise electric current for optimal copper deposition, ensuring uniformity across the wafer.

  5. Specialized Organic Additives: • Accelerators for promoting bottom-up filling • Suppressors to inhibit sidewall deposition • Levelers to control overplating at the top surface

This advanced process aimed to address several key challenges:

  • Achieving uniform deposition in extremely small features (50-200nm scale)

  • Minimizing defects and voids in copper interconnects

  • Improving overall yield and chip performance

  • Enabling progression to smaller technology nodes (10nm and beyond)

While this solution focused on optimizing the electroplating process, it was part of a broader strategy to enhance Intel's overall manufacturing capabilities and overcome the difficulties in transitioning to smaller technology nodes.

My Approach

During a pivotal period when Intel faced significant challenges in transitioning from 14nm to 10nm technology nodes, I played a key role in optimizing the electroplating process - a crucial step in semiconductor manufacturing. As Intel struggled with delays and yield issues, our team's work in electroplating became increasingly critical to maintaining the company's competitive edge.

My contributions focused on three main areas:

  1. Process Quality:

    • Leveraged advanced statistical analysis tools (JMP, SPC) to enhance process control and troubleshoot root causes impacting quality.

    • Ensured copy-exact process transfers for technologies 1222, 1272, and 1273 across production facilities.

    These efforts directly contributed to improving chip yields and performance, vital for Intel's competitiveness in the market.


  2. Process Automation & Optimization:

    • Spearheaded initiatives that slashed scheduled equipment and process downtime by 70%, significantly boosting production capacity.

    • Led cross-functional teams to achieve a 20% reduction in monthly unscheduled equipment downtime.

    These improvements were crucial in helping Intel maximize output from existing facilities while maintaining high quality standards.


  3. Cost Management:

    • Identified and resolved a key issue in process cost mapping, saving the electroplating department 22% of its predictive maintenance budget.

    These cost-saving initiatives helped the electroplating team operate within its allocated budget, ensuring efficient resource utilization without compromising on process quality or output.

By focusing on these key areas, our work in optimizing this critical step in chip production helped address some of Intel's most pressing manufacturing challenges, including the need for uniform deposition in extremely small features and minimizing defects in copper interconnects.


Photo by Igor Shalyminov on Unsplash